Wolfspeed’s Next Generation GaN HEMTs Deliver Unmatched Efficiency

28V RF Devices Set New Industry Benchmark

DURHAM, N.C.–(BUSINESS WIRE)–Wolfspeed,
A Cree Company and a leading global supplier of GaN-on-SiC high
electron mobility transistors (HEMTs) and monolithic microwave
integrated circuits (MMICs), has introduced a new series of 28V GaN HEMT
RF power devices. These new devices are capable of higher frequency
operation to 8GHz with increased efficiency and higher gain as well as
best-in-class reliability. RF design engineers are now able to build
more efficient broadband power amplifiers for commercial and military
wireless communications and radar applications.

The new 28V GaN HEMT devices are developed using Wolfspeed’s proven
0.25µm GaN-on-SiC process, and are designed with the same package
footprint as the previous generation of 0.4µm devices, making it
possible for RF design engineers to use them as drop-in replacements for
the earlier devices in existing designs. Available as both packaged
devices (CG2H400 Series) and bare die (CG2H800 Series), the new GaN
HEMTs deliver 33% higher frequency operation to 8GHz (from 6GHz), an
additional 1.5-2.0dB of gain, as well as a 5-10% boost in operating
efficiency compared to Wolfspeed’s earlier generation devices.

“By moving to our proven 0.25µm process for these next-generation
devices, we are able to deliver significant performance advantages to a
wide range of customers while maintaining the superior reliability these
types of applications require,” said Jim Milligan, RF and microwave
director, Wolfspeed. “Offering these new devices in the same packages as
our previous generation parts enables RF design engineers to quickly and
easily boost the performance of their RF amplifiers.”

The higher efficiency (up to 70% at PSAT) and higher
bandwidth capability makes these devices ideal for an extensive range of
RF power amplifier applications, including those for military
communications systems, radar equipment (UHF, L-, S-, C-, and X-band),
electronic warfare (EW) and electronic counter-measure (ECM) systems, as
well as commercial RF applications in the industrial, medical, and
scientific (ISM) band.

The CG2H400 Series include these packaged 28V unmatched GaN HEMT devices:
CG2H40010
– 10W, 8GHz operation with 70% efficiency (at PSAT) and
18dB/16dB small signal gain (at 2.0GHz and 4.0GHz, respectively)
CG2H40025
– 25W, 6GHz operation with 65% efficiency (at PSAT) and
17dB/15dB small signal gain (at 2.0GHz and 4.0GHz, respectively)
CG2H40045
– 45W, 4GHz operation with 60% efficiency (at PSAT) and
18dB/14dB small signal gain (at 2.0GHz and 4.0GHz, respectively)
The
CG2H400 Series devices are available in screw-down flanged or
solder-down pill packages.

The CG2H800 Series include these bare die 28V unmatched GaN HEMT devices:
CG2H80015
– 15W, 8GHz operation with 65% efficiency (at PSAT) and
17dB/12dB small signal gain (at 4.0GHz and 8.0GHz, respectively)
CG2H80030
– 30W, 8GHz operation with 65% efficiency (at PSAT) and
17dB/12dB small signal gain (at 4.0GHz and 8.0GHz, respectively)
CG2H80060
– 60W, 8GHz operation with 65% efficiency (at PSAT) and
15dB/12dB small signal gain (at 4.0GHz and 8.0GHz, respectively)

Compared to conventional silicon (Si) and gallium arsenide (GaAs)
devices, Wolfspeed’s GaN-on-SiC RF devices deliver higher breakdown
voltage, higher temperature operation, higher efficiency, higher thermal
conductivity, higher power density, and wider bandwidths, all of which
are critical for achieving smaller, lighter, and more efficient
microwave and RF products. Wolfspeed™ GaN-on-SiC RF devices
enable next-generation broadband, public safety, and ISM (industrial,
scientific, and medical) amplifiers; broadcast, satellite, and tactical
communications amplifiers; UAV data links; cellular infrastructure; test
instrumentation; and two-way private radios.

More information about the newly released CG2H400 and CG2H800 devices
can be found here.

Attendees of European
Microwave 2017 can learn more about these devices as well as the
rest of Wolfspeed’s GaN RF portfolio by visiting them at booth #195. For
more information about Wolfspeed’s RF products and foundry services,
please visit www.wolfspeed.com/rf.

About Cree, Inc.:

Cree is a market-leading innovator of lighting-class LEDs, lighting
products and Wolfspeed power and radio frequency (RF) semiconductors.
Cree’s product families include LED lighting systems and bulbs, blue and
green LED chips, high-brightness LEDs, lighting-class power LEDs,
power-switching devices and RF devices. Cree’s products are driving
improvements in applications such as general illumination, electronic
signs and signals, satellite communications, power supplies and
inverters.

Please refer to www.cree.com
for additional product and Company information.

Cree® is a registered trademark and Wolfspeed™ is
a trademark of Cree, Inc.

Contacts

Cree, Inc.
Corporate Communications:
Claire Simmons
[email protected]