Mitsubishi Electric’s New 6.5 kV Full-SiC Power Semiconductor Module Achieves World’s Highest Power Density

Will lead to smaller, more efficient power equipment for railcars and
electric power systems

TOKYO–(BUSINESS WIRE)–Mitsubishi
Electric Corporation (TOKYO:6503) announced today that it has
developed a 6.5 kV full silicon carbide (SiC) power semiconductor module
that is believed to offer the world’s highest power density (calculated
from rated voltage and current) among power semiconductor modules rated
from 1.7 kV to 6.5 kV. The unprecedented power density is made possible
by the model’s original structure with integrated
metal-oxide-semiconductor field-effect transistor (MOSFET) and diode on
single chip and its newly developed package. Mitsubishi Electric expects
the module to lead to smaller and more energy-efficient power equipment
for high-voltage railcars and electric power systems. Going forward, the
company will continue to further develop the technology and conduct
further reliability tests.

Features

1) Highest rated voltage in full-SiC modules should
lead to smaller and more efficient power electronics equipment

• 6.5 kV rated voltage is highest among silicon insulated-gate bipolar
  transistor (IGBT) power semiconductor modules
• Full-SiC technology improves power density and efficiency and enables
  higher operating frequencies for smaller and more energy-efficient
  high-voltage power electronics equipment

2) Original one-chip structure and new package for
high heat dissipation and high heat tolerance

• Chip area reduced drastically thanks to integrating MOSFET and diode
  on single chip
• Insulating substrate with superior thermal properties and reliable die
  bonding technology facilitate heat dissipation and heat tolerance
• 9.3 kVA/cm3 power density is world’s highest among power
  semiconductor modules rated from 1.7 kV to 6.5 kV

Details
Mitsubishi Electric’s
SiC power semiconductor modules cover a full range of rated voltages,
including its new full-SiC power module rated at 6.5 kV, tops among
silicon IGBT power semiconductor modules. Conventionally, power circuits
use two power semiconductor modules connected in series, which requires
high voltage in excess of the modules’ rated voltages. The new single
module with a higher rated voltage significantly simplifies the circuit.
Also, replacing silicon IGBT modules with full-SiC modules substantially
reduces switching loss.

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