Global Silicon Carbide Power Semiconductor Market 2017-2022 by Power Module, Industry Vertical & Geography – Research and Markets

DUBLIN–(BUSINESS WIRE)–The "Silicon
Carbide Power Semiconductor Market – Forecasts from 2017 to 2022"
report has been added to Research and Markets' offering.

The global silicon carbide power semiconductor market is projected to
witness the growth at a CAGR of 24.36% during the forecast period to
reach a total market size of US$906.43 million by 2022, increasing from
US$304.79 million in 2017.

The silicon carbide power semiconductors market is expected to witness
robust growth during the forecast period, owing to advantages such as
low conductance loss at high temperature and low input and switching
losses as compared to conventional silicon power semiconductor.

Increasing demand of silicon carbide-based photovoltaic cells in
developing and emerging economies is expected to create numerous
opportunities for growth. In addition, rise in government investment and
increase in application of solar power in various fields is expected to
propel the market growth further.

Steel and energy is the fastest growing application segment for the
silicon carbide market. The high temperature of sublimation makes
silicon carbide useful for bearings and furnace parts; while properties
such as hardness, high thermal resistance, and high-temperature strength
are extremely useful in grinding wheels and in abrasive paper and cloth
products. Silicon carbide devices are replacing pure silicon devices as
they operate at higher temperatures and voltages and provide high power
density and higher current density.

Asia Pacific is projected to grow at the highest rate as compared to
other regions. The power sector in Asia Pacific is expected to create a
huge demand for silicon carbide semiconductors devices. The expected
initiation of many power projects in China, India, and Thailand coupled
with the implementation of solar projects in this region is creating
huge demands for silicon carbide power semiconductor.

The initiative taken by the Government of Japan in relation to solar
power project, there is a huge requirement of solar power panels. These
panels along with solar inverters require silicon carbide material.
Thus, Asia Pacific and other emerging regions are expected to be
high-growth markets, driven by growing industrialization and
infrastructure spending. Silicon carbide power semiconductor market
demand in North America and Europe is expected to grow in-line with
end-user industries.

Key Topics Covered:

1. Introduction

2. Research Methodology

3. Key Findings Of The Study

4. Market Dynamics

5. Global Silicon Carbide Power Semiconductor Market Forecast By Power
Module (US$ million)

6. Global Silicon Carbide Power Semiconductor Market Forecast By
Industry Vertical (US$ million)

7. Global Silicon Carbide Power Semiconductor Market Forecast By
Geography (US$ million)

8. Competitive intelligence

9. Company profiles

• Infineon Technologies AG
• Microsemi Corporation
• Toshiba Corporation
• Renesas Electronics Corporation
• Fairchild Semiconductor International Inc.
• Norstel AB
• STMicroelectronics

For more information about this report visit https://www.researchandmarkets.com/research/m436zk/global_silicon?w=4

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Related
Topics: Advanced
Materials, Semiconductor,
Electronic
Chemicals